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P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 ? MARCH 94
FEATURES
* 100 Volt V DS
* R DS(on) =20 ?
ZVP3310A
G
D
S
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
-100
-140
-1.2
± 20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV DSS
-100
V
I D =-1mA, V GS =0V
Gate-Source Threshold
Voltage
V GS(th)
-1.5
-3.5
V
ID=-1mA, V DS = V GS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
I GSS
I DSS
I D(on)
-300
20
-1
-50
nA
μ A
μ A
mA
V GS = ± 20V, V DS =0V
V DS =-100V, V GS =0
V DS =-80V, V GS =0V, T=125°C (2)
V DS =-25 V, V GS =-10V
Static Drain-Source On-State R DS(on)
Resistance (1)
20
?
V GS =-10V,I D =-150mA
Forward Transconductance
(1)(2)
Input Capacitance (2)
g fs
C iss
50
50
mS
pF
V DS =-25V,I D =-150mA
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C oss
C rss
t d(on)
t r
t d(off)
t f
15
5
8
8
8
8
pF
pF
ns
ns
ns
ns
V DS =-25V, V GS =0V, f=1MHz
V DD ≈ -25V, I D =-150mA
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%
(2) Sample test.
3-432
Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
(
3
)
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